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2SB69
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2SB69

SKU: 2SB69
2SB69 Transistor Germanium PNP CASE: TO3 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Toshiba
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 25
Max. hFE 160
Min hFE 34
Ic Max. (A) 6.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 330u
Polarity PNP
Derate Above 25°C 500m
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 75
@VCE (V) 1.5
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 34
SKU 584232
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