The website uses cookies to allow us to better understand how the site is used. By continuing to use this site, you consent to this policy. Click to learn more. 
    
2SB768

2SB768

SKU: 2SB768
2SB768 Transistor - CASE: TO252 MAKE: NEC
+ VAT 20% for UK purchases
Datasheet
2SB768 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO252
Manufacturer NEC
Vbr CBO 200
Vbr CEO 150
Max. PD (W) 2.0
Derate (Amb) (W/°C) 16m
Max. hFE 200
Min hFE 40
Ic Max. (A) 2.0
@Ic (test) (A) 400m
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 150
@VCE (V) 10
Pinout Equivalence Number 4-104
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 180 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 80739
Back