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2SB789
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2SB789

SKU: 2SB789
2SB789 Transistor Silicon PNP CASE: SOT89 MAKE: Matsushita Electronics
Datasheet
2SB789 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT89
Manufacturer Matsushita Electronics
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 1.0
Derate (Amb) (W/°C) 8.0m
Max. hFE 330
Ic Max. (A) 0.5
@Ic (test) (A) 150m
Polarity PNP
Trans. Freq (Hz) Min. 120M
Oper. Temp (°C) Max. 150
@VCE (V) 10
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 65
SKU 343682
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