The website uses cookies to allow us to better understand how the site is used. By continuing to use this site, you consent to this policy. Click to learn more. 
    
2SB800
View detailed images (1)

2SB800

SKU: 2SB800
2SB800 Transistor - Case: SP0 Make: NEC
+ VAT 20% for UK purchases
Datasheet
2SB800 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SP0
Manufacturer NEC
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 2.0
Derate (Amb) (W/°C) 10m
Max. hFE 400
Min hFE 90
Ic Max. (A) 300m
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100n
@Temp. (test) (°C) 50
VRRM 800
Polarity PNP
1-Cycle Surge Current (A) 50
@Temp. (test) for Vf) 25
Vf Max. 1.0
Ir @25°C 10u
I(out) (If AVG) Max. 2.0
Trans. Freq (Hz) Min. 100M
@Volts (test) (V) 800
@If (test) 1.0
Oper. Temp (°C) Max. 150
@VCE (V) 1.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 2 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 160 °C
Collector Capacitance (Cc) 13 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code FK_FL_FM
SKU 343691
Back