The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB800
View detailed images (1)

2SB800

SKU: 2SB800
2SB800 Transistor Silicon PNP CASE: SP0 MAKE: NEC
Datasheet
2SB800 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SP0
Manufacturer NEC
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 2.0
Derate (Amb) (W/°C) 10m
Max. hFE 400
Min hFE 90
Ic Max. (A) 300m
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100n
@Temp. (test) (°C) 50
VRRM 800
Polarity PNP
1-Cycle Surge Current (A) 50
@Temp. (test) for Vf) 25
Vf Max. 1.0
Ir @25°C 10u
I(out) (If AVG) Max. 2.0
Trans. Freq (Hz) Min. 100M
@Volts (test) (V) 800
@If (test) 1.0
Oper. Temp (°C) Max. 150
@VCE (V) 1.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 2 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 160 °C
Collector Capacitance (Cc) 13 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code FK_FL_FM
SKU 343691
Back