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2SB807
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2SB807

SKU: 2SB807
2SB807 Transistor Silicon PNP CASE: SOT89 MAKE: Matsushita Electronics
Datasheet
2SB807 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT89
Manufacturer Matsushita Electronics
Vbr CBO 150
Vbr CEO 150
Max. PD (W) 1.0
Max. hFE 450
Ic Max. (A) 50m
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 200M
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 180 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 90
SKU 343695
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