2SB828S

SKU: 2SB828S

2SB828S SemiConductor - Case: TO218 Make: SANJ

Product specifications

Weight	0.01 kg
Equivalent	2SB828
Type	Transistor Silicon PNP
Case	TO218
Manufacturer	Sanyo Semiconductor
Vbr CBO	60
Vbr CEO	50
Max. PD (W)	80
Max. hFE	280
Min hFE	140
Ic Max. (A)	12
@Ic (test) (A)	1
Icbo Max. @Vcb Max. (A)	0.1m
Polarity	PNP
Trans. Freq (Hz) Min.	10M
Oper. Temp (°C) Max.	140
@VCE (V)	20
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	80 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	12 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	5 MHz
Forward Current Transfer Ratio (hFE), MIN	140
SKU	766894

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