The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB835
View detailed images (5)

2SB835

SKU: 2SB835
2SB835 Transistor Silicon PNP CASE: SOT32 MAKE: Matsushita Electronics
Datasheet
2SB835 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT32
Manufacturer Matsushita Electronics
Vbr CBO 20
Vbr CEO 18
Max. PD (W) 500m
C(ob) (F) 40p
Derate (Amb) (W/°C) 4.0m
hfe 360=
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 140
@Ic (A) 500m
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 135 °C
Collector Capacitance (Cc) 40 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 90
SKU 116637
Back