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2SB836
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2SB836

SKU: 2SB836
2SB836 Transistor Silicon PNP CASE: TO220 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Hitachi
Vbr CBO 25
Vbr CEO 25
Max. PD (W) 20
Derate (Amb) (W/°C) 160m
Min hFE 20
Ic Max. (A) 2.5
@Ic (test) (A) 1.5
Icbo Max. @Vcb Max. (A) 20u
Polarity PNP
Oper. Temp (°C) Max. 140
@VCE (V) 2
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 160
SKU 766884
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