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2SB838
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2SB838

SKU: 2SB838
2SB838 Transistor Silicon PNP CASE: TO220 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Hitachi
Vbr CBO 50
Vbr CEO 50
Max. PD (W) 20
Max. hFE 200
Min hFE 60
Ic Max. (A) 2.0
@Ic (test) (A) 50m
Polarity PNP
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 65 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 766873
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