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2SB849
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2SB849

SKU: 2SB849
2SB849 Transistor Silicon PNP CASE: TO218 MAKE: NEC
Product specifications
Type Transistor Silicon PNP
Case TO218
Manufacturer NEC
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 80
Derate (Amb) (W/°C) 640m
Max. hFE 200
Min hFE 40
Ic Max. (A) 7.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 14M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 340 pF
Transition Frequency (ft): 7 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 80751
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