The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB856
View detailed images (12)

2SB856

SKU: 2SB856
2SB856 Transistor Silicon PNP CASE: TO220 MAKE: Hitachi
Price:
£7.19 Inc. VAT (£5.99 Ex. VAT)
£7.19 Inc. VAT (£5.99 Ex. VAT)
Qty
  • 4 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
2SB856 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Hitachi
Vbr CEO 50
Max. PD (W) 25
Max. hFE 320
Min hFE 60
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Polarity PNP
Trans. Freq (Hz) Min. 35M
@VCE (V) 4.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 17 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 20319
Back