2SB861

SKU: 2SB861

2SB861 Semiconductor - CASE: TO220 MAKE: Hitachi

Price: £11.99

+ VAT 20% for UK purchases

£11.99

Qty

+ VAT 20% for UK purchases

Datasheet

2SB861 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	2SB861C
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Hitachi
Vbr CBO	200
Vbr CEO	150
Max. PD (W)	30
Derate (Amb) (W/°C)	240m
Max. hFE	120
Min hFE	60
Ic Max. (A)	2.0
@Ic (test) (A)	50m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	150 V
Maximum Collector-Emitter Voltage \|Vce\|	150 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	30 pF
Forward Current Transfer Ratio (hFE), MIN	50
SKU	16885

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