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2SB896
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2SB896

SKU: 2SB896
2SB896 Transistor Silicon PNP CASE: TO220 MAKE: Matsushita Electronics
Datasheet
2SB896 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Matsushita Electronics
Vbr CBO 40
Vbr CEO 20
Max. PD (W) 35
Derate (Amb) (W/°C) 280m
Max. hFE 260
Min hFE 60
Ic Max. (A) 10
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Tr Max. (s) 500n
Trans. Freq (Hz) Min. 150M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 35 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN 150
SKU 116646
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