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2SB929
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2SB929

SKU: 2SB929
2SB929 Transistor Silicon PNP CASE: TO262 MAKE: Matsushita Electronics
Datasheet
2SB929 Datasheet
Product specifications
Equivalent 2SB929A
Type Transistor Silicon PNP
Case TO262
Manufacturer Matsushita Electronics
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 35
Derate (Amb) (W/°C) 280m
Max. hFE 250
Min hFE 40
Ic Max. (A) 3.0
@Ic (test) (A) 1.0m
Icbo Max. @Vcb Max. (A) 200u
Polarity PNP
Tr Max. (s) 1.2u
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 35 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 343729
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