The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB930
View detailed images (12)

2SB930

SKU: 2SB930
2SB930 Transistor Silicon PNP CASE: TO218 MAKE: Matsushita Electronics
Datasheet
2SB930 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO218
Manufacturer Matsushita Electronics
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 40
Derate (Amb) (W/°C) 320m
Max. hFE 250
Min hFE 40
Ic Max. (A) 4.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 400u
Polarity PNP
Tr Max. (s) 500n
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 343731
Back