The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB945
View detailed images (12)

2SB945

SKU: 2SB945
2SB945 Transistor Silicon PNP CASE: TO220 MAKE: Wingshing
Datasheet
2SB945 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Wingshing
Vbr CBO 130
Vbr CEO 80
Max. PD (W) 40
Derate (Amb) (W/°C) 320m
Max. hFE 260
Min hFE 60
Ic Max. (A) 5.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Tr Max. (s) 500n
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 130 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 117012
Back