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2SB967
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2SB967

SKU: 2SB967
2SB967 Transistor Silicon PNP CASE: TO252 MAKE: Matsushita Electronics
Datasheet
2SB967 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO252
Manufacturer Matsushita Electronics
Vbr CBO 30
Vbr CEO 20
Max. PD (W) 20
Derate (Amb) (W/°C) 160m
Max. hFE 625
Min hFE 90
Ic Max. (A) 5.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 120M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 343764
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