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2SB998
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2SB998

SKU: 2SB998
2SB998 Transistor Silicon PNP CASE: TO126 MAKE: Toshiba
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer Toshiba
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 30
Derate (Amb) (W/°C) 240m
Max. hFE 15k
Min hFE 2.0k
Ic Max. (A) 7.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Tr Max. (s) 800n
Oper. Temp (°C) Max. 140
@VCE (V) 3.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 6000
SKU 766601
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