2SC1122

SKU: 2SC1122

2SC1122 Transistor Silicon NPN CASE: TO129 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Equivalent	2SC1122A
Type	Transistor Silicon NPN
Case	TO129
Manufacturer	Toshiba
Vbr CBO	35
Vbr CEO	20
Max. PD (W)	30
Max. hFE	40-
Min hFE	20
Ic Max. (A)	4.5
@Ic (test) (A)	1.5
Icbo Max. @Vcb Max. (A)	50u
Polarity	NPN
Derate Above 25°C	5.0
Trans. Freq (Hz) Min.	400M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	4-32
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	4.5 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	766520

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