The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC1122A
View detailed images (1)

2SC1122A

SKU: 2SC1122A
2SC1122A Transistor Silicon NPN CASE: TO129 MAKE: Toshiba
Datasheet
2SC1122A Datasheet
Product specifications
Equivalent 2SC1122
Type Transistor Silicon NPN
Case TO129
Manufacturer Toshiba
Vbr CBO 35
Vbr CEO 20
Max. PD (W) 30
Max. hFE 120
Min hFE 20
Ic Max. (A) 4.5
@Ic (test) (A) 1.5
Icbo Max. @Vcb Max. (A) 50u
Polarity NPN
Derate Above 25°C 5.0
Trans. Freq (Hz) Min. 400M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 4-32
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 4.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 343777
Back