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2SC1122
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2SC1122

SKU: 2SC1122
2SC1122 Transistor Silicon NPN CASE: TO129 MAKE: Toshiba
Product specifications
Equivalent 2SC1122A
Type Transistor Silicon NPN
Case TO129
Manufacturer Toshiba
Vbr CBO 35
Vbr CEO 20
Max. PD (W) 30
Max. hFE 40-
Min hFE 20
Ic Max. (A) 4.5
@Ic (test) (A) 1.5
Icbo Max. @Vcb Max. (A) 50u
Polarity NPN
Derate Above 25°C 5.0
Trans. Freq (Hz) Min. 400M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 4-32
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 4.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 766520
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