The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC1162
View detailed images (13)

2SC1162

SKU: 2SC1162
2SC1162 Transistor Silicon NPN CASE: TO126 MAKE: Hitachi
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
Qty
  • 82 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
2SC1162 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Hitachi
Vbr CBO 35
Vbr CEO 35
Max. PD (W) 10
Ic Max. (A) 1.5
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 20u
Polarity NPN
R(sat) (Û) 500m
Derate Above 25°C 80m
Trans. Freq (Hz) Min. 180M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 180 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 20156
Back