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2SC1206B
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2SC1206B

SKU: 2SC1206B
2SC1206B Transistor Silicon NPN CASE: TO129 MAKE: Mitsubishi
Product specifications
Equivalent 2SC1206
Type Transistor Silicon NPN
Case TO129
Manufacturer Mitsubishi
Vbr CBO 45
Vbr CEO 45
Max. PD (W) 30
Max. hFE 180
Min hFE 10
Ic Max. (A) 2.0
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 200m
Trans. Freq (Hz) Min. 1.5G
Oper. Temp (°C) Max. 175
@VCE (V) 25
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 750 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 766474
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