The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC1387
View detailed images (13)

2SC1387

SKU: 2SC1387
2SC1387 Transistor Silicon NPN CASE: TO39 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Fujitsu
Vbr CBO 25
Vbr CEO 20
Max. PD (W) 600m
C(ob) (F) 2.5p
Derate (Amb) (W/°C) 4.8m
hfe 100
Ic Max. (A) 150m
Icbo Max. @Vcb Max. (A) 500n
Polarity NPN
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 40m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 5 pF
Transition Frequency (ft): 800 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 540317
Back