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2SC1882H
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2SC1882H

SKU: 2SC1882H
2SC1882H Transistor Silicon NPN CASE: TO33 MAKE: Hitachi
Product specifications
Type Transistor Silicon NPN
Case TO33
Manufacturer Hitachi
Vbr CEO 120
Max. PD (W) 8.0
t(f) Max. (S) 500n-
Max. hFE 20k
Min hFE 1.0k
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0u+
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 300n-
R(sat) (Û) 500m
t(stor) Max. (S) 1.0u
Derate Above 25°C 53m
Trans. Freq (Hz) Min. 50M
@VCE (test) 2.0
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 4-102
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 8 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 29 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 5000
SKU 590858
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