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2SC2017
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2SC2017

SKU: 2SC2017
2SC2017 Transistor Silicon NPN CASE: TO3 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Mitsubishi
Vbr CBO 450
Vbr CEO 400
Max. PD (W) 100
t(f) Max. (S) 800n
Min hFE 8.0
Ic Max. (A) 10
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
R(sat) (Û) 200m
Derate Above 25°C 800m
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 450 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 8
SKU 552278
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