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2SC2019
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2SC2019

SKU: 2SC2019
2SC2019 Transistor Silicon NPN CASE: TO3 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Mitsubishi
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 100
t(f) Max. (S) 800n
Min hFE 10
Ic Max. (A) 15
@Ic (test) (A) 15
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
R(sat) (Û) 100m
Derate Above 25°C 800m
Oper. Temp (°C) Max. 140
@VCE (V) 3.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 552280
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