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2SC2113
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2SC2113

SKU: 2SC2113
2SC2113 Transistor Silicon NPN CASE: SOT32 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case SOT32
Manufacturer Matsushita Electronics
Vbr CBO 40
Vbr CEO 30
Max. PD (W) 4.0
Min hFE 130
Ic Max. (A) 2.0
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
R(sat) (Û) 600m
Derate Above 25°C 32m
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 150
@VCE (V) 10
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 4 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 50 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 130
SKU 550526
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