The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC2117
View detailed images (1)

2SC2117

SKU: 2SC2117
2SC2117 Transistor Silicon NPN CASE: MD34 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case MD34
Manufacturer Toshiba
Vbr CBO 35
Vbr CEO 17
Max. PD (W) 7.5
Max. hFE 150
Min hFE 10
Ic Max. (A) 800m
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 51m
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 7.5 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 17 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 765892
Back