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2SC2175
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2SC2175

SKU: 2SC2175
2SC2175 Transistor Silicon NPN CASE: TO3 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Mitsubishi
Vbr CBO 350
Vbr CEO 350
Max. PD (W) 100
t(f) Max. (S) 500n
Min hFE 15
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
R(sat) (Û) 240m
Derate Above 25°C 800m
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 350 V
Maximum Collector-Emitter Voltage |Vce| 350 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 10
SKU 552283
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