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2SC2182
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2SC2182

SKU: 2SC2182
2SC2182 Transistor Silicon NPN CASE: SOT120 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case SOT120
Manufacturer Toshiba
Vbr CBO 65
Vbr CEO 35
Max. PD (W) 60
Min hFE 10
Ic Max. (A) 6.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 400m
Trans. Freq (Hz) Min. 150M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 4-28
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 65 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 160 pF
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 585187
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