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2SC2206
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2SC2206

SKU: 2SC2206
2SC2206 Transistor Silicon NPN CASE: SOT33 MAKE: Matsushita Electronics
Datasheet
2SC2206 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT33
Manufacturer Matsushita Electronics
Vbr CBO 30
Vbr CEO 20
Max. PD (W) 400m
Derate (Amb) (W/°C) 1.8m
hfe 50
Ic Max. (A) 30m
Polarity NPN
Trans. Freq (Hz) Min. 300M
@VCE (test) (V) 10i
Oper. Temp (°C) Max. 135
@Ic (A) 1.0m
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 135 °C
Collector Capacitance (Cc) 1.3 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 343864
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