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2SC2618
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2SC2618

SKU: 2SC2618
2SC2618 Transistor Silicon NPN CASE: TO236 MAKE: Hitachi
Datasheet
2SC2618 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO236
Manufacturer Hitachi
Vbr CEO 35
Max. PD (W) 150m
hfe 60
Ic Max. (A) 500m
Polarity NPN
@VCE (test) (V) 3.0
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 5 pF
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SMD Transistor Code RB_RC_RD
SKU 343929
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