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2SC2619B
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2SC2619B

SKU: 2SC2619B
2SC2619B Transistor Silicon NPN CASE: TO236 MAKE: Hitachi
Product specifications
Equivalent 2SC2619
Type Transistor Silicon NPN
Case TO236
Manufacturer Hitachi
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 150m
C(ob) (F) 3.5p
Derate (Amb) (W/°C) 1.5m
hfe 120=
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 500n
Polarity NPN
Trans. Freq (Hz) Min. 230M
@VCE (test) (V) 12
Oper. Temp (°C) Max. 125
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 3.5 pF
Transition Frequency (ft): 115 MHz
Forward Current Transfer Ratio (hFE), MIN 55
SMD Transistor Code FA_FB_FC
SKU 765573
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