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2SC2713
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2SC2713

SKU: 2SC2713
2SC2713 Transistor Silicon NPN CASE: SOT23 MAKE: Toshiba
Datasheet
2SC2713 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Toshiba
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 150m
C(ob) (F) 4.0p
Derate (Amb) (W/°C) 1.5m
hfe 200
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 125
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code DG_DL
SKU 343939
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