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2SC281H
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2SC281H

SKU: 2SC281H
2SC281H Transistor Silicon NPN CASE: TO1 MAKE: Hitachi
Product specifications
Type Transistor Silicon NPN
Case TO1
Manufacturer Hitachi
Vbr CBO 30
Vbr CEO 20
Max. PD (W) 200m
C(ob) (F) 10p
Derate (Amb) (W/°C) 1.3m
hfe 170
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN 170
SKU 543005
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