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2SC2981
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2SC2981

SKU: 2SC2981
2SC2981 Transistor Silicon NPN CASE: TO3 MAKE: Hitachi
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Hitachi
Vbr CBO 900
Vbr CEO 800
Max. PD (W) 100
t(f) Max. (S) 1u
Min hFE 15
Ic Max. (A) 8.0
@Ic (test) (A) 800m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 1u
Derate Above 25°C 800m
Oper. Temp (°C) Max. 140
@VCE (V) 5
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 900 V
Maximum Collector-Emitter Voltage |Vce| 800 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 135 °C
Forward Current Transfer Ratio (hFE), MIN 20
SKU 395216
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