The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC2982C
View detailed images (12)

2SC2982C

SKU: 2SC2982C
2SC2982C Transistor Silicon NPN CASE: SOT89 MAKE: Toshiba
Product specifications
Equivalent 2SC2982
Type Transistor Silicon NPN
Case SOT89
Manufacturer Toshiba
Vbr CBO 30
Vbr CEO 10
Max. PD (W) 500m
C(ob) (F) 27p
Derate (Amb) (W/°C) 4.0m
hfe 450=
Ic Max. (A) 2.0
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) .50
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 27 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 300
SKU 585996
Back