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2SC2996
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2SC2996

SKU: 2SC2996
2SC2996 Transistor Silicon NPN CASE: SP0 MAKE: Toshiba
Datasheet
2SC2996 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SP0
Manufacturer Toshiba
Vbr CBO 40
Vbr CEO 30
Max. PD (W) 150m
Derate (Amb) (W/°C) 1.5m
hfe 40
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 350M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 125
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 1.3 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 115276
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