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2SC3011
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2SC3011

SKU: 2SC3011
2SC3011 Transistor Silicon NPN CASE: SC59 MAKE: Toshiba
Datasheet
2SC3011 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SC59
Manufacturer Toshiba
Vbr CBO 20
@Ic (A) 5.0m
Mat. Silicon Logic
Noise Fig. 2.3
Oper. Gain Typ (S21) 12
f(osc) Max. (Hz) 6.5G
Polarity NPN
PD Max. (W) 150m
Coll. (or drain) Current Max. 30m
@Freq. (test) 1.0G
@VCE (test) 5.0
Oper. Temp (°C) Max. 125
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 7 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 0.9 pF
Transition Frequency (ft): 6500 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code MA
SKU 115277
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