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2SC3072C
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2SC3072C

SKU: 2SC3072C
2SC3072C Transistor Silicon NPN CASE: TO218 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Toshiba
Vbr CBO 50
Vbr CEO 20
Max. PD (W) 1.0
Max. hFE 450
Min hFE 300
Ic Max. (A) 5.0
@Ic (test) (A) .50
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Derate Above 25°C 8.0m
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 40 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 300
SKU 765182
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