The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC321
View detailed images (4)

2SC321

SKU: 2SC321
2SC321 Transistor Silicon NPN CASE: TO18 MAKE: Hitachi
Product specifications
Equivalent 2SC321H
Type Transistor Silicon NPN
Case TO18
Manufacturer Hitachi
Vbr CBO 40
Vbr CEO 15
Max. PD (W) 360m
C(ob) (F) 6p
Derate (Amb) (W/°C) 2.3m
t(f) Max. (S) 25n-+
hfe 35
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 250n
Polarity NPN
Tr Max. (s) 20n-
t(stor) Max. (S) 30n
Trans. Freq (Hz) Min. 300M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 542489
Back