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2SC321H
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2SC321H

SKU: 2SC321H
2SC321H Transistor Silicon NPN CASE: TO18 MAKE: Hitachi
Product specifications
Equivalent 2SC321
Type Transistor Silicon NPN
Case TO18
Manufacturer Hitachi
Vbr CBO 40
Vbr CEO 15
Max. PD (W) 360m
C(ob) (F) 6p
Derate (Amb) (W/°C) 2.3m
t(f) Max. (S) 25n-+
hfe 35
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 250n
Polarity NPN
Tr Max. (s) 20n-
t(stor) Max. (S) 30n
Trans. Freq (Hz) Min. 300M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 180 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 543024
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