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2SC3376
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2SC3376

SKU: 2SC3376
2SC3376 Transistor Silicon NPN CASE: TO218 MAKE: Toshiba
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
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Datasheet
2SC3376 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Toshiba
Vbr CBO 900
Vbr CEO 800
Max. PD (W) 60
t(f) Max. (S) 1.0u
Min hFE 10
Ic Max. (A) 3.0
@Ic (test) (A) .80
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C .48
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 900 V
Maximum Collector-Emitter Voltage |Vce| 800 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 10
SKU 81131
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