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2SC3808
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2SC3808

SKU: 2SC3808
2SC3808 Transistor - Case: TO126 Make: Sanyo Semiconductor
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Datasheet
2SC3808 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Sanyo Semiconductor
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 15
t(f) Max. (S) 3.5u+
Max. hFE 3.2k
Min hFE 800
Ic Max. (A) 2.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Tr Max. (s) 230n
Trans. Freq (Hz) Min. 170M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 24 pF
Transition Frequency (ft): 170 MHz
Forward Current Transfer Ratio (hFE), MIN 800
SKU 116009
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