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2SC501
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2SC501

SKU: 2SC501
2SC501 Transistor Silicon NPN CASE: TO39 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Toshiba
Vbr CBO 60
Vbr CEO 30
Max. PD (W) 750m
C(ob) (F) 7p
Derate (Amb) (W/°C) 5.0m
hfe 80
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) .10u
Polarity NPN
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 25 pF
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 584697
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