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2SC509G
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2SC509G

SKU: 2SC509G
2SC509G Transistor Silicon NPN CASE: SOT33 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case SOT33
Manufacturer Toshiba
Vbr CBO 35
Vbr CEO 30
Max. PD (W) 600m
C(ob) (F) 11p
Derate (Amb) (W/°C) 4.8m
hfe 70
Ic Max. (A) 800m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 150
@Ic (A) 50m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SKU 763209
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