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2SC556
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2SC556

SKU: 2SC556
2SC556 Transistor Silicon NPN CASE: TO39 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Toshiba
Vbr CBO 40
Vbr CEO 20
Max. PD (W) 750m
C(ob) (F) 3.8p
Derate (Amb) (W/°C) 6.3m
hfe 45
Ic Max. (A) 400m
Icbo Max. @Vcb Max. (A) 25u
Polarity NPN
Trans. Freq (Hz) Min. 850M
@VCE (test) (V) 15
Oper. Temp (°C) Max. 150
@Ic (A) 50m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.75 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 425 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SMD Transistor Code FD
SKU 584709
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