2SC582

SKU: 2SC582

2SC582 Transistor Silicon NPN CASE: TO66 MAKE: Matsushita Electronics

Product specifications

Weight	0.05 kg
Equivalent	2SC582A
Type	Transistor Silicon NPN
Case	TO66
Manufacturer	Matsushita Electronics
Vbr CBO	300
Vbr CEO	300
Max. PD (W)	4.0
Max. hFE	150
Min hFE	30
Ic Max. (A)	100m
@Ic (test) (A)	50m
Icbo Max. @Vcb Max. (A)	100m
Polarity	NPN
Derate Above 25°C	50m
Oper. Temp (°C) Max.	140
@VCE (V)	10i
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	4 W
Maximum Collector-Base Voltage \|Vcb\|	300 V
Maximum Collector-Emitter Voltage \|Vce\|	300 V
Maximum Emitter-Base Voltage \|Veb\|	3 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	30
SKU	549815

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