| Equivalent | 2SC583Z | |
| Type | Transistor Silicon NPN | |
| Case | TO72 | |
| Manufacturer | Matsushita Electronics | |
| Vbr CBO | 30 | |
| Vbr CEO | 15 | |
| Max. PD (W) | 200m | |
| C(ob) (F) | 800f | |
| hfe | 25 | |
| Ic Max. (A) | 25m | |
| Polarity | NPN | |
| Trans. Freq (Hz) Min. | 1.3G | |
| @VCE (test) (V) | 1.0 | |
| Oper. Temp (°C) Max. | 175 | |
| @Ic (A) | 2.0m | |
| Pinout Equivalence Number | 4-22 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.2 W | |
| Maximum Collector-Base Voltage |Vcb| | 30 V | |
| Maximum Emitter-Base Voltage |Veb| | 2 V | |
| Maximum Collector Current |Ic max| | 0.02 A | |
| Max. Operating Junction Temperature (Tj) | 200 °C | |
| Transition Frequency (ft): | 650 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 40 | |
| SKU | 762721 | |